[7p-N101-1~10] [Open Symposium] Wide-Bandgap Semiconductors for the Future: Scientific Progress and Societal Impact

4:20 PM - 4:50 PM JST(7:20 AM - 7:50 AM UTC)

[7p-N101-7] Defect Engineering for Ensuring Reliability of SiC Semiconductors

〇Masashi Kato¹, Shunta Harada², Hitoshi Sakane³ (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)

Keywords:

SiC,semiconductor,defect

Silicon carbide (SiC) crystals are a relatively new material that will be used in semiconductor devices to improve the range of electric vehicles. However, SiC crystals contain stacking faults, which are misaligned atoms in the crystals, and the stacking faults gradually expand during operation, causing performance degradation. We have found that this expansion can be suppressed by introducing point defects using a high-energy ion implantation technique. This defect engineering can ensure the reliability of SiC semiconductors.