Session Details
[7p-N101-1~10][Open Symposium] Wide-Bandgap Semiconductors for the Future: Scientific Progress and Societal Impact
Sun. Sep 7, 2025 1:30 PM - 6:00 PM JST
Sun. Sep 7, 2025 4:30 AM - 9:00 AM UTC
Sun. Sep 7, 2025 4:30 AM - 9:00 AM UTC
N101 (Lecture Hall North)
[7p-N101-1]Opening & Introduction
〇Atsushi A. Yamaguchi1 (1.Kanazawa Inst. Tech.)
[7p-N101-2]Sustainable Electronics and the Acceleration of Social Implementation of Nitrides
〇Hiroshi Amano1 (1.IMaSS, Nagoya Univ.)
[7p-N101-3]Alternative electrical conductivity control with large polarization charges in AlGaN
〇Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo Univ.)
[7p-N101-4]Diamond semiconductors for quantum sensing
〇Mutsuko Hatano1, Tadashi Sakai1 (1.Science Tokyo)
[7p-N101-5]Recent Progress of Lasers in Nitride-Based Semiconductors
〇Takashi Mukai1 (1.Nichia Corp.)
[7p-N101-6]Progress and Future Perspective of SiC Semiconductor toward the Decarbonized Society
〇Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
[7p-N101-7]Defect Engineering for Ensuring Reliability of SiC Semiconductors
〇Masashi Kato1, Shunta Harada2, Hitoshi Sakane3 (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)
[7p-N101-8]Current Status and Potential of Gallium Oxide Devices
〇Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
[7p-N101-9]Trends of SiC Power Semiconductor for Electric Vehicles and Carbon Neutrality
〇Takashi Kanemura1 (1.MIRISE)
[7p-N101-10]<!--StartFragment-->Closing<!--EndFragment-->
〇Takeshi Ohshima1 (1.QST)