[7p-N102-1~7] The cutting edge of charged particle beam for nanotechnology

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[7p-N102-3] Electron Beam Lithography in the R&D of Silicon Qubit Integration Technology

Kimihiko Kato¹, 〇Takahiro Mori¹ (1.AIST)

Keywords:

semiconductor,qubits,electron beam lithography

Silicon qubit devices, which can take advantage of VLSI integration technologies, are attracting attention in terms of their large-scale integration capability. Since their feature size is at the level of EUV lithography, EB lithography technology is commonly utilized in the R&D stage. We believe that the implementation of proximity effect correction (PEC) considering the intermediate component in addition to the standard scattering components is useful for the development of silicon qubit integration technology. In this talk, we would present the importance of the PEC effect involving the intermediate component with our experimental results on the silicon qubit fabrication.