[7p-N104-1~8] Recent progress in atomic/nano-scale electronic states measurement using scanning probe microscopy

1:35 PM - 2:05 PM JST(4:35 AM - 5:05 AM UTC)

[7p-N104-2] Time-resolved scanning nonlinear dielectric microscopy for nanoscale characterization of semiconductor properties

〇Kohei Yamasue¹ (1.Tohoku Univ.)

Keywords:

scanning nonlinear dielectric microscopy,semiconductor,SNDM

Scanning nonlinear dielectric microscopy (SNDM) is a type of scanning probe microscopy that detects local capacitance changes beneath a conductive tip with high sensitivity. In recent years, significant progress has been made in the nanoscale characterization of semiconductor properties using time-resolved SNDM, enabling measurements such as local capacitance–voltage profiling and visualization of interface defect density distributions at semiconductor–insulator interfaces. This presentation will cover recent advances in time-resolved SNDM and introduce ongoing study aimed at advancing the technique toward microscopic spectroscopy.