[7p-N104-1~8] Recent progress in atomic/nano-scale electronic states measurement using scanning probe microscopy

2:35 PM - 3:05 PM JST(5:35 AM - 6:05 AM UTC)

[7p-N104-4] Recent Developments of Electrostatic Force Microscopy and Photo-induced Force Microscopy

〇Yasuhiro Sugawara¹, Yanjun Li¹ (1.Osaka Univ.)

Keywords:

electrostatic force spectroscopoy,photoinduced force microscopy

When measuring semiconductor samples using Kelvin probe force microscopy, the contact potential difference depends not only on the position of the bulk Fermi level but also on the surface potential of the semiconductor. Here we present electrostatic force spectroscopy using high-frequency and low-frequency AC bias voltages to measure the density of interfacial states inside semiconductors. We also introduce photo-induced force microscopy, which detects the intensity distribution of near-field light localized on a material surface as a force and can image the local optical response of the material with high resolution.