[7p-N301-1~17] CS.7 Code-sharing session of 6.1&13.3&13.5

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N301-5] Growth of orientation-controlled (100)-oriented rare-earth-doped epitaxial HfO₂thin films

〇(M2)Yutaro Tsuchiya¹, Yuxian Hu¹, Kazuki Okamoto¹, Wakiko Yamaoka², Yasunaga Kagaya², Yukari Inoue², Hiroshi Funakubo¹ (1.Science Tokyo, 2.TDK Corporation)

Keywords:

ferroelectric,HfO2,PLD

To experimentally determine the spontaneous polarization of HfO₂, it is essential to fabricate films with the short axis containing the polarization direction oriented out-of-plane, i.e., (010)/(001) orientation. Our previous study demonstrated that aligning the in-plane long axis of the film with the underlying layer promotes out-of-plane alignment of the short axis. In this study, we attempted to control the crystal orientation using various lanthanide-doped HfO₂ films, which are expected to exhibit different lattice parameters due to the variation in ionic radii of the dopants.