[7p-N301-1~17] CS.7 Code-sharing session of 6.1&13.3&13.5

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N301-9] Simulation-based Verification of the Physical Mechanism Model for Wake-up Effect in Ultrathin Ferroelectric Hf_0.5Zr_0.5O₂

〇Kosuke Ito¹, Mitsuru Takenaka¹, Shinichi Takagi^1,2, Kasidit Toprasertpong¹ (1.Univ. Tokyo, 2.ACRO)

Keywords:

HfO2-based ferroelectrics,wake-up

In this study, we validated the proposed wake-up physical model incorporating oxygen migration for 4 nm-thick Hf_0.5Zr_0.5O₂ (HZO) through simulations. The simulation results showed good agreement with the experimental data, supporting the validity of the proposed model. This model is expected to contribute to wake-up control and reliability evaluation in future device design.