Presentation Information
[7p-N302-10]Enhancement of Al2O3 band gap with Al seed kayer deposited by sputtering on MoS2 film
〇Mitsuru Taga1, Shunsuke Nozawa1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1.Institute of Science Tokyo)
Keywords:
TMDC,MoS2,seed layer
With the miniaturization of transistors, TMDCs are attracting attention. Although ALD is used as a method for depositing insulating films on TMDC films, there is a risk of defects occurring at the interface because there are no dangling bonds on the surface. Seed layers have been studied as a solution, but conventionally, they have been deposited by evaporation. However, since sputtering is more suitable for industrial applications, this study evaluated the bandgap of the insulating film by depositing a seed layer on the TMDC film using the sputtering method.