[7p-N302-1~19] 17.3 Layered materials

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[7p-N302-10] Enhancement of Al₂O₃ band gap with Al seed kayer deposited by sputtering on MoS₂ film

〇Mitsuru Taga¹, Shunsuke Nozawa¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1.Institute of Science Tokyo)

Keywords:

TMDC,MoS2,seed layer

With the miniaturization of transistors, TMDCs are attracting attention. Although ALD is used as a method for depositing insulating films on TMDC films, there is a risk of defects occurring at the interface because there are no dangling bonds on the surface. Seed layers have been studied as a solution, but conventionally, they have been deposited by evaporation. However, since sputtering is more suitable for industrial applications, this study evaluated the bandgap of the insulating film by depositing a seed layer on the TMDC film using the sputtering method.