Presentation Information
[7p-N302-11]Synthesis and evaluation of electrical characterization of metastable layered semiconductor SiTe2
〇Kohki Tonoike1, Shogo Hatayama2, Mihyeon Kim1, Yuta Saito3,2,1 (1.Tohoku Univ., 2.AIST, SFRC, 3.Tohoku Univ. GXT)
Keywords:
2D material,SiTe2,metastable
In this presentation, we will discuss a metastable semiconductor SiTe2, for the purpose of the discovery of the forthcoming transistor channel material. Aiming for synthesis of single phase SiTe2 crystal from amorphous crystallization method, we consider film composition, annealing temperature, and cap material, etc. In this time, we will report on samples with HfO2 cap, thorough X-ray diffraction and observation. Also, electrical characteristics, like hall mobility, and their dependence on the number of layers calculated by first-principals will also be discussed.