[7p-N302-1~19] 17.3 Layered materials

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[7p-N302-4] Preparations of WS₂ ultrathin films by sulfurization of W sputtered films

〇Hayate Takagi¹, Yusuke Wada¹, Fumitaka Ohashi^1,2, Himanshu Jha^1,2, Tetsuji Kume^1,2 (1.GNST, Gifu Univ, 2.Eng, Gifu Univ)

Keywords:

semiconductor,tungsten disulfide,transition metal dichalcogenide