[7p-N302-1~19] 17.3 Layered materials

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[7p-N302-9] Synthesis of boron carbon nitrides by high-energy ion irradiation

〇Shiro Entani¹, Masaru Takizawa², Makoto kohda^3,1 (1.QST, 2.Ritsumeikan Univ., 3.Tohoku Univ.)

Keywords:

boron carbon nitrides,XAFS,two-dimensional semiconductor

Hexagonal boron carbon nitride (h-BCN) exhibits a structure similar to that of graphite and is a two-dimensional semiconductor with a tunable band gap, rendering it a promising material for a wide range of applications, including optical devices. In order to elucidate the fundamental properties of BCN and established the basis for industrial applications, it is imperative to devise a method for the synthesis of continuous, sheet-like BCN thin films. In this study, a methodology was developed for the synthesis of large-area BCN thin films, using the non-equilibrium excitation reaction field induced by high-energy heavy-ion irradiation.