Presentation Information
[7p-N401-15]Carrier relaxation dynamics in green InGaN / GaN quantum dots
〇Reiho Ozaki1, Yuto Nakama1, Riku Iwasaki1, Atushi Tackeuchi1, Shulong Lu2, Xue Zhang2, Wenxian Yang2 (1.Waseda Univ., 2.SINANO)
Keywords:
InGaN quantum dots,Carrier relaxation,Tunnel time
Stranski–Krastanov mode growth yields QDs with heterogeneous size, shape, and inter-dot spacing, which can contribute to broadened emission spectra and diminished quantum efficiency. Therefore, elucidation of the emission dynamics and carrier relaxation pathways is important. In this study, time-resolved photoluminescence measurements were conducted to investigate carrier relaxation dynamics within the green InGaN QDs, underpinned by the hypothesis of interdot tunneling-mediated carrier transfer.