[7p-N401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[7p-N401-7] Bias voltage dependence of circularly polarized luminescence properties of InGaAs quantum dots sandwiched between GaNAs quantum wells

〇Kyota Nakadate¹, Hiroto Kise¹, Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ.)

Keywords:

dilute nitride semiconductor,quantum dot,electron spin polarization