[7p-N401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[7p-N401-8] Effects of nitrogen layer on photoreflectance spectra in GaAs crystals including InAs quantum dots

〇Osamu Kojima¹, Tomoya Inoue², Takashi Kita² (1.Chiba Inst. Tech., 2.Kobe Univ.)

Keywords:

InAs quantum dot,photoreflectance spectrum,nitrogen layer

Variation of otical characteristics in InAs quantum dots due to introduction of nitrogen layer in GaAs cap layer has been known. However, variation in GaAs layer is not known well. Therefore, we tried to elucidate the variation by measuring the photoreflectance specatra. As the resucts, it was obtained that the response in wetting layer disappears and that the suface field intensity changes.