[7p-N403-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N403-4] Investigation of the temperature dependence of minority carrier lifetime in Mg₂Si pn-junction diodes.

〇Hibiki Katsumata¹, Ryosuke Furuta¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

minority carrier lifetime,silicide semiconductor,photodiode

We have been investigating the performance improvement of pn-junction photodiodes fabricated by thermal diffusion of p-type impurity Ag into n-type Mg₂Si substrates, aiming at the realization of low-cost and versatile SWIR sensors. In this study, we focused on the minority carrier lifetime, which is closely related to dark current and photoresponsivity, and evaluated its temperature dependence using the open-circuit voltage decay (OCVD) method in the range from 330K to 230K. As a result, a reproducible trend of increasing lifetime with decreasing temperature was confirmed.