[7p-N403-1~9] 13.2 Exploratory Materials, Physical Properties, Devices | The 86th JSAP Autumn Meeting 2025

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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[7p-N403-1~9]13.2 Exploratory Materials, Physical Properties, Devices

Sun. Sep 7, 2025 1:30 PM - 4:00 PM JST
Sun. Sep 7, 2025 4:30 AM - 7:00 AM UTC

N403 (Lecture Hall North)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[7p-N403-1][The 58th Young Scientist Presentation Award Speech] Study of physical properties of Mg₃Sb₂ for infrared light receiving application

〇Kiridoshi Nozomu¹, Akito Ayukawa¹, Koki Nejo¹, Takeru Kuriyama¹, Wakaba Yamamoto², Akira Yasuhara², Kohei Sato², Haruhiko Udono¹, Shunya Sakane¹ (1.Ibaraki Univ., 2.JEOL)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[7p-N403-2]Fabrication of a back-illuminated Mg₂Si-pn junction PD sensor by conventional microfabrication process

〇Hideto Takei¹, Yuki Iino¹, Yamaguchi Hiroki¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[7p-N403-3]The Effect of Thermal Diffusion Conditions on the Output Characteristics of TPV Cells Fabricated on N-Type Mg₂Si Substrates

〇Takumi Shimizu¹, Kosuke Shimano¹, Hibiki Katsumata¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N403-4]Investigation of the temperature dependence of minority carrier lifetime in Mg₂Si pn-junction diodes.

〇Hibiki Katsumata¹, Ryosuke Furuta¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[7p-N403-5]Study of Mg₂Si epitaxial growth on sapphire substrates

〇Shunya Sakane¹, Ryousuke Furuta¹, Takeru Kuriyama¹, Akito Ayukawa¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[7p-N403-6]Effects Comparative Evaluation of Three Mg₂Si Thin Film Formation Processes Including Deposition and Annealing

〇Ryoga Toyama¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N403-7]Thermal stability of δ-Ga₂O₃ thin films grown by mist-CVD

〇(M1)Aoi Saito¹, Kazuki Shimazoe², Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Nagoya Inst. of Tech.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[7p-N403-8]Thermoelectric properties of mixed anion layered compounds LaCu1-dChO (Ch = S, Se) with wide gap in Jonker plot

〇Yoichi Kamihara¹ (1.Keio Univ.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N403-9]Prediction of Solvent Properties by Machine Learning with COSMO-RS Descriptors

〇Itsuki Kawanami¹, Hiroto Yokoyama¹, Akiko Kumada¹, Masahiro Sato¹ (1.Univ. of Tokyo Engineering)

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Session Details

[7p-N403-1~9]13.2 Exploratory Materials, Physical Properties, Devices

[7p-N403-1][The 58th Young Scientist Presentation Award Speech] Study of physical properties of Mg3Sb2 for infrared light receiving application

[7p-N403-2]Fabrication of a back-illuminated Mg2Si-pn junction PD sensor by conventional microfabrication process

[7p-N403-3]The Effect of Thermal Diffusion Conditions on the Output Characteristics of TPV Cells Fabricated on N-Type Mg2Si Substrates

[7p-N403-4]Investigation of the temperature dependence of minority carrier lifetime in Mg2Si pn-junction diodes.

[7p-N403-5]Study of Mg2Si epitaxial growth on sapphire substrates

[7p-N403-6]Effects Comparative Evaluation of Three Mg2Si Thin Film Formation Processes Including Deposition and Annealing

[7p-N403-7]Thermal stability of δ-Ga2O3 thin films grown by mist-CVD