[7p-N403-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[7p-N403-5] Study of Mg₂Si epitaxial growth on sapphire substrates

〇Shunya Sakane¹, Ryousuke Furuta¹, Takeru Kuriyama¹, Akito Ayukawa¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg2Si,MBE,thin film

In this study, Mg₂Si thin films were epitaxially grown on sapphire substrates by molecular beam epitaxy and their electrical properties were evaluated.