[7p-N403-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-N403-7] Thermal stability of δ-Ga₂O₃ thin films grown by mist-CVD

〇(M1)Aoi Saito¹, Kazuki Shimazoe², Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Nagoya Inst. of Tech.)

Keywords:

Gallium oxide,thermal stability,Mist-CVD

Gallium oxide (Ga₂O₃) has five different crystal polymorphs, each offering potential for various applications. Among them, δ-Ga₂O₃ with a bixbyite structure has attracted our attention. We have successfully achieved the epitaxial growth of single-layer δ-Ga₂O₃ thin films on YSZ substrates by using β-Fe₂O₃, which shares the same crystal structure, as a buffer layer. For future device applications, understanding the thermal stability of δ-Ga₂O₃ is essential. In this study, we evaluated the thermal stability of δ-Ga₂O₃ thin films grown on β-Fe₂O₃/YSZ(111) substrates using mist chemical vapor deposition (CVD).