[7p-P01-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[7p-P01-1] Plasma Simulation of the Self-Ionized Sputtering

〇Susumu Isono¹, Shintaro Tamiya¹, Masaya Watanabe¹, Michiro Isobe², Satoshi Hamaguchi² (1.ULVAC, Inc., 2.Osaka Univ.)

Keywords:

Self-Ionized Sputtering,Magnetron Plasma,Simulation

The Self-Ionized Sputtering (SIS) process is an important technology in semiconductor manufacturing. However, the physical phenomena underlying the SIS process are complex and not fully understood. Simulations are therefore expected to provide valuable insights for equipment development and process optimization. In this study, we performed simulations with a particular focus on the discharge phenomena in the SIS process.