Presentation Information
[7p-P01-3]Rate theory for SiCxNyOz thin film formation by room temperature PECVD
〇Hitoshi Habuka1 (1.Yokohama Nat. Univ.)
Keywords:
PECVD,SiCxNyOz film,Rate theory
The equation for describing the amorphous SiCxNyOz film thickness, obtained in the previous study, was used to prepare the data set. The data set was analyzed and discussed based on the rate theory. The PECVD process was clarified and reproduced by the equation consisting of the gas pahse reactions, Langmuir-type surface reaction and the argon etching. The detail will be discussed.