Presentation Information
[7p-P02-2]Formation of a Cap Layer to Prevent Carbonation in SiO:CH/Li Thin Films
Kouki Watanabe1, 〇Haruna Abe1, Yasushi Inoue1, Osamu Takai2 (1.Chiba Inst. Technol., 2.SSAME)
Keywords:
Organic group-containing silica,Plasma CVD/sputtering combined equipment,Cap layer
In order to form a cap layer that would prevent carbonation of Li, a film was formed using a plasma CVD/sputtering hybrid device. In the IR measurement results, no C-O peak was detected when the partial pressure ratio of the raw material (TMMOS) during cap layer formation was 15%. In addition, since peaks of Si-CH3, C-H, and O-H were confirmed, it is believed that a SiO:CH cap layer that prevents carbonation was formed.