[7p-S103-1~11] Atomic Layer Process (ALP) analysis and application technologies (2)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[7p-S103-4] Capping of surface quantum dots by Atomic Layer Deposition (ALD)

Hanif Mohammadi¹, Ronel Roca¹, Naotaka Iwata¹, 〇Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Keywords:

semiconductor,quantum dot,passivation

Molecular beam epitaxially-grown InAs quantum dots on GaAs(001) are known to lose their unique electronic properties upon exposure to air due to contamination and generation of surface states. In the present study, we found that by appropriately capping the air exposed-quantum dots by metal oxide thin films using atomic layer deposition (ALD), with the choice of suitable precursors, the PL intensity from the quantum dots can be enhanced. Furthermore, by preparing the ALD thin capping film amorphous-like, the large PL peak blue-shift which is suffered by GaAs capping can be significantly suppressed while restoring the PL intensity.