[7p-S103-1~11] Atomic Layer Process (ALP) analysis and application technologies (2) | The 86th JSAP Autumn Meeting 2025

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Symposium (Oral)Symposium : Atomic Layer Process (ALP) analysis and application technologies (2)

[7p-S103-1~11]Atomic Layer Process (ALP) analysis and application technologies (2)

Sun. Sep 7, 2025 1:30 PM - 5:15 PM JST
Sun. Sep 7, 2025 4:30 AM - 8:15 AM UTC

S103 (Lecture Hall South)

Sponsor

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-S103-1]Atomic layer deposition on self-assembled monolayers for designing metal oxide nanostructures

〇(D)Takeshi Ono¹, Takuro Hosomi¹, Hikaru Saito², Hiroshi Masai³, Midori Ikeuchi², Jiangyang Liu¹, Wataru Tanaka¹, Tsunaki Takahashi¹, Jun Terao³, Takeshi Yanagida^1,2 (1.Grad. school of Eng., The Univ. of Tokyo, 2.IMCE, Kyushu Univ., 3.Grad. school of Arts and Sci., The Univ. of Tokyo)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-S103-2]Evaluation of MOALD-SnO₂ Thin Film using Novel Sn Precursor

〇(M1)Masaki Ando¹, Yoshio Ohshita², Toshinori Numata², Hyunju Lee⁴, Hideaki Machida³, Atsushi Ogura^1,4 (1.School of Sci. and Technol., Meiji Univ., 2.Toyota Technological Institute, 3.Gas-Phase Growth Ltd., 4.MREL)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[7p-S103-3]Process monitoring of deposition by in-situ spectroscopic ellipsometer

〇Jyunya Takashima¹ (1.J.A.Woollam Japan)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[7p-S103-4]Capping of surface quantum dots by Atomic Layer Deposition (ALD)

Hanif Mohammadi¹, Ronel Roca¹, Naotaka Iwata¹, 〇Itaru Kamiya¹ (1.Toyota Tech. Inst.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[7p-S103-5]Cleaning and passivation of surface quantum dots by Atomic Layer Deposition (ALD)

Hanif Mohammadi¹, Ronel Roca¹, Naotaka Iwata¹, 〇Itaru Kamiya¹ (1.Toyota Tech. Inst.)

3:15 PM - 3:45 PM JST(6:15 AM - 6:45 AM UTC)

[7p-S103-6]Endpoint detection in Atomic Layer Etching (ALE) for GaN MISHEMT structures - Optical in-situ control with sub-nm precision

〇Yuto Tomita¹, Kolja Haberland¹, Macello Binetti¹, Daniel Cornwell¹, Christian Loerchner-Gerdaus¹, Thomas Zettler¹ (1.LayTec AG)

3:45 PM - 4:15 PM JST(6:45 AM - 7:15 AM UTC)

[7p-S103-7]Surface modification using cluster beams and their application in atomic layer processes

〇Noriaki Toyoda¹, Masaya Takeuchi¹ (1.Univ. of Hyogo)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-S103-8]Mechanism of TiN Chlorination during Thermal-Cyclic Atomic Layer Etching via In-Situ Surface Reaction Analysis

〇(M2)Shunya Hirai¹, Kazunori Shinoda², Thi-Thuy-Nga Nguyen¹, Kenichi Inoue¹, Takayoshi Tsutsumi¹, Kenji Ishikawa¹ (1.Nagoya Univ., 2.Hitachi High-Tech Corp.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[7p-S103-9]Low-temperature Nb-PEALD process using NbCl5 precursor

〇Jun Yamaguchi¹, Jun Tanaka¹, Akimasa Nakashima¹, Noboru Sato¹, Naoki Tamaoki¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[7p-S103-10]Research on Ru deposition when changing surface conditions

〇Shogo Okugawa¹, Rahman Gagi Tauhidur², Ryo Yokogawa^1,2, Yoshiteru Amemiya², Akinobu Teramoto^1,2,3 (1.Grad. Sch. of Adv. Eng., Hiroshima Univ, 2.RISE, Hiroshima Univ, 3.HiSOR, Hiroshima Univ)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)English Presentation

[7p-S103-11]Development of Pd Pretreatment for Fabricating Ultrathin Continuous ALD-Co Films

〇(P)Yubin DENG¹, Jun Yamaguchi¹, Yuhei Otaka¹, Souga Nagai¹, Noboru Sato¹, Naoki Tamaoki¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.The Univ. of Tokyo)

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