Session Details
[7p-S103-1~11]Atomic Layer Process (ALP) analysis and application technologies (2)
Sun. Sep 7, 2025 1:30 PM - 5:15 PM JST
Sun. Sep 7, 2025 4:30 AM - 8:15 AM UTC
Sun. Sep 7, 2025 4:30 AM - 8:15 AM UTC
S103 (Lecture Hall South)
[7p-S103-1]Atomic layer deposition on self-assembled monolayers for designing metal oxide nanostructures
〇(D)Takeshi Ono1, Takuro Hosomi1, Hikaru Saito2, Hiroshi Masai3, Midori Ikeuchi2, Jiangyang Liu1, Wataru Tanaka1, Tsunaki Takahashi1, Jun Terao3, Takeshi Yanagida1,2 (1.Grad. school of Eng., The Univ. of Tokyo, 2.IMCE, Kyushu Univ., 3.Grad. school of Arts and Sci., The Univ. of Tokyo)
[7p-S103-2]Evaluation of MOALD-SnO2 Thin Film using Novel Sn Precursor
〇(M1)Masaki Ando1, Yoshio Ohshita2, Toshinori Numata2, Hyunju Lee4, Hideaki Machida3, Atsushi Ogura1,4 (1.School of Sci. and Technol., Meiji Univ., 2.Toyota Technological Institute, 3.Gas-Phase Growth Ltd., 4.MREL)
[7p-S103-3]Process monitoring of deposition by in-situ spectroscopic ellipsometer
〇Jyunya Takashima1 (1.J.A.Woollam Japan)
[7p-S103-4]Capping of surface quantum dots by Atomic Layer Deposition (ALD)
Hanif Mohammadi1, Ronel Roca1, Naotaka Iwata1, 〇Itaru Kamiya1 (1.Toyota Tech. Inst.)
[7p-S103-5]Cleaning and passivation of surface quantum dots by Atomic Layer Deposition (ALD)
Hanif Mohammadi1, Ronel Roca1, Naotaka Iwata1, 〇Itaru Kamiya1 (1.Toyota Tech. Inst.)
[7p-S103-6]Endpoint detection in Atomic Layer Etching (ALE) for GaN MISHEMT structures - Optical in-situ control with sub-nm precision
〇Yuto Tomita1, Kolja Haberland1, Macello Binetti1, Daniel Cornwell1, Christian Loerchner-Gerdaus1, Thomas Zettler1 (1.LayTec AG)
[7p-S103-7]Surface modification using cluster beams and their application in atomic layer processes
〇Noriaki Toyoda1, Masaya Takeuchi1 (1.Univ. of Hyogo)
[7p-S103-8]Mechanism of TiN Chlorination during Thermal-Cyclic Atomic Layer Etching via In-Situ Surface Reaction Analysis
〇(M2)Shunya Hirai1, Kazunori Shinoda2, Thi-Thuy-Nga Nguyen1, Kenichi Inoue1, Takayoshi Tsutsumi1, Kenji Ishikawa1 (1.Nagoya Univ., 2.Hitachi High-Tech Corp.)
[7p-S103-9]Low-temperature Nb-PEALD process using NbCl5 precursor
〇Jun Yamaguchi1, Jun Tanaka1, Akimasa Nakashima1, Noboru Sato1, Naoki Tamaoki1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
[7p-S103-10]Research on Ru deposition when changing surface conditions
〇Shogo Okugawa1, Rahman Gagi Tauhidur2, Ryo Yokogawa1,2, Yoshiteru Amemiya2, Akinobu Teramoto1,2,3 (1.Grad. Sch. of Adv. Eng., Hiroshima Univ, 2.RISE, Hiroshima Univ, 3.HiSOR, Hiroshima Univ)
[7p-S103-11]Development of Pd Pretreatment for Fabricating Ultrathin Continuous ALD-Co Films
〇(P)Yubin DENG1, Jun Yamaguchi1, Yuhei Otaka1, Souga Nagai1, Noboru Sato1, Naoki Tamaoki1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. of Tokyo)