[7p-S103-1~11] Atomic Layer Process (ALP) analysis and application technologies (2)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[7p-S103-5] Cleaning and passivation of surface quantum dots by Atomic Layer Deposition (ALD)

Hanif Mohammadi¹, Ronel Roca¹, Naotaka Iwata¹, 〇Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Keywords:

semiconductor,quantum dot,passivation

In our previous presentation, we demonstrated that by ALD growing thin metal oxide film on epitaxially grown InAs quantum dots on GaAs(001) can be passivation capped nearly strain free. However, since the InAs quantum dots in this case are air-exposed, there needs to be a process in which the surface states and contaminations are removed. In the present work, we show that the precursors used for ALD are responsible for the process, and elucidate the mechanisms. We find that certain organometallic precursors may be responsible for such processes, and that by the choice of chemically suited precursors, the cleaning, thereby passivation, can be enhanced.