[8a-N105-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[8a-N105-1] Low-temperature deposition of IGZO using high-power impulse magnetron sputtering

〇Taketo Nagata¹, Kosuke Takenaka², Yuichi Setsuhara², Takayuki Ohta¹ (1.Meijo Univ., 2.Osaka Univ.)

Keywords:

High-power impulse magnetron sputtering,Oxide semiconductor,IGZO