The 86th JSAP Autumn Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[8a-N105-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Sep 8, 2025 9:00 AM - 11:45 AM JST
Mon. Sep 8, 2025 12:00 AM - 2:45 AM UTC
N105 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[8a-N105-1]Low-temperature deposition of IGZO using high-power impulse magnetron sputtering

〇Taketo Nagata1, Kosuke Takenaka2, Yuichi Setsuhara2, Takayuki Ohta1 (1.Meijo Univ., 2.Osaka Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[8a-N105-2]Deposition of indium oxide film using high-power impulse magnetron sputtering

〇Daiki Horikawa1, Kosuke Takenaka2, Yuichi Setsuhara2, Takayuki Ohta1 (1.Meijo Univ., 2.Osaka Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-N105-3]In2O3 growth using In2O and H2O source gases: thermodynamic analysis and experimental evaluation of growth behavior

〇Rie Togashi1, Masato Ishikawa2 (1.Sophia Univ., 2.Gas-Phase Growth Ltd.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[8a-N105-4]Evaluation of fluctuations within the crystal grains of Ce-doped hydrogenated indium oxide (ICO:H) thin films

〇Koya Kudo1,2, Chia-Tsong Chen1, Tatsuro Maeda1 (1.AIST., 2.Chiba Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[8a-N105-5]Effect of Alkali Hydroxide Addition on Ozone Reactivity of Solution-Processed IGZO-TFTs

〇Hiroharu Sasajima1, Takaaki Morimoto1, Keisuke Ishii1 (1.NDA)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[8a-N105-6]Improvement of CO2 sensitivity of TFT gas sensors based on increasing the polar In2O3(100) ratio

〇(M1)Yuichiro Ebisawa1, JinHyeok Cha2, Tomohiro Yamaguchi1, Shinya Aikawa1 (1.Kogakuin Univ., 2.Chonnam Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[8a-N105-7]Evaluation of photoexcited carrier conduction based on the temperature dependence of impedance in ZnGa2O4 polycrystalline thin films

〇Reiya Kase1, Tomoki Iitsuka1, Yuya Oguma1, Takashi Kosone1, Kazunuki Yamamoto2, Satoshi Ishii1 (1.Tokyo Denki Univ., 2.Chiba Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[8a-N105-8][The 58th Young Scientist Presentation Award Speech] Direct observation of the density of in-gap states of In2O3:H and the origin of instability in thin film transistor Ⅱ

〇Ryotaro Nakazawa1, Yusaku Magari2,3, Keisuke Fukutani1, Hiromichi Ohta3, Satoshi Kera1 (1.IMS, 2.Kochi Univ. of Tech, 3.RIES - Hokkaido Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[8a-N105-9]Discussion on dominant factors of field-effect mobility in atomic later deposited polycrystalline In2O3 and Ga-doped In2O3 channel field effect transistors

〇Takanori Takahashi1, Hoshii Takuya2, Tsuruma Yuki3, Sunagawa Misa3, Tomai Shigekazu3, Park Jongho2, Tamamoto Hiroki2, Kakushima Kuniyuki2, Uraoka Yukiharu1 (1.NAIST, 2.Science Tokyo, 3.Idemitsu Kosan)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[8a-N105-10]Investigation on channel thickness and annealing condition on PBS and NBS instability in AlOx-passivated ultrathin InOx FETs

〇CHIATSONG CHEN1, Kasidit Toprasertpong2, Toshifumi Irisawa1, Wen-Hsin Chang1, Shinji Migita1, Yukinori Morita1, Hiroyuki Ota1, Tatsuro Maeda1 (1.AIST, 2.The Univ. of Tokyo)
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