[8a-N105-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[8a-N105-10] Investigation on channel thickness and annealing condition on PBS and NBS instability in AlO_x-passivated ultrathin InO_x FETs

〇CHIATSONG CHEN¹, Kasidit Toprasertpong², Toshifumi Irisawa¹, Wen-Hsin Chang¹, Shinji Migita¹, Yukinori Morita¹, Hiroyuki Ota¹, Tatsuro Maeda¹ (1.AIST, 2.The Univ. of Tokyo)

Keywords:

oxide semiconductor,ultrathin body channel,reliability

ALD-based ultrathin InO_x channels have received much attention for BEOL transistors to realize monolithic 3D integration [1]. However, the amount of subgap state strongly affects the current and instability behavior of InO_x FETs [2]. To understand the impact of intrinsic subgap state on electrical characteristics, we have investigated the PBS and NBS instability of AlO_x-passivated InO_x FETs with and without annealing down to channel thickness (T_ch) of 1.8-nm.