講演情報
[8a-N105-10]Investigation on channel thickness and annealing condition on PBS and NBS instability in AlOx-passivated ultrathin InOx FETs
〇CHIATSONG CHEN1, Kasidit Toprasertpong2, Toshifumi Irisawa1, Wen-Hsin Chang1, Shinji Migita1, Yukinori Morita1, Hiroyuki Ota1, Tatsuro Maeda1 (1.AIST, 2.The Univ. of Tokyo)
キーワード：
oxide semiconductor、ultrathin body channel、reliability
ALD-based ultrathin InOx channels have received much attention for BEOL transistors to realize monolithic 3D integration [1]. However, the amount of subgap state strongly affects the current and instability behavior of InOx FETs [2]. To understand the impact of intrinsic subgap state on electrical characteristics, we have investigated the PBS and NBS instability of AlOx-passivated InOx FETs with and without annealing down to channel thickness (Tch) of 1.8-nm.