[8a-N105-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-N105-3] In₂O₃ growth using In₂O and H₂O source gases: thermodynamic analysis and experimental evaluation of growth behavior

〇Rie Togashi¹, Masato Ishikawa² (1.Sophia Univ., 2.Gas-Phase Growth Ltd.)

Keywords:

Epitaxial Growth,Thermodynamic Analysis,Indium Oxide

In this study, we propose a novel growth process in which In₂O gas is selectively generated in the source zone through the reaction of high-purity metallic indium with H₂O gas, and In₂O₃ is subsequently grown in the growth zone via the reaction between the generated In₂O gas and additional H^₂O gas. A thermodynamic analysis of the In₂O₃ growth process was conducted, followed by the construction of a custom growth system based on the analysis results. Growth experiments were carried out to evaluate and confirm the growth behavior.