[8a-N105-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[8a-N105-9] Discussion on dominant factors of field-effect mobility in atomic later deposited polycrystalline In₂O₃ and Ga-doped In₂O₃ channel field effect transistors

〇Takanori Takahashi¹, Hoshii Takuya², Tsuruma Yuki³, Sunagawa Misa³, Tomai Shigekazu³, Park Jongho², Tamamoto Hiroki², Kakushima Kuniyuki², Uraoka Yukiharu¹ (1.NAIST, 2.Science Tokyo, 3.Idemitsu Kosan)

Keywords:

oxide semiconductor,field-effect transistor,atomic layer deposition