[8a-N201-1~10] 6.1 Ferroelectric thin films

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N201-4] Study of YAlN thin films fabrication using Pulse Laser Deposition

〇(M2)Shuhei Hashimoto¹, Ryosuke Takagi¹, Koji Iwasaki¹, Kaito Fujitani¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

Keywords:

Aluminum Nitride,Pulsed Laser Deposition (PLD)

Aluminum nitride (AlN) has attracted significant attention as a lead-free piezoelectric material due to its high heat resistance and durability. However, enhancement of its piezoelectric properties has relied on the use of scandium (Sc), a rare and expensive element. Recently, yttrium (Y), a more cost-effective alternative, has been proposed; however, film quality degradation due to oxidation remains a major challenge. In this study, we attempted to fabricate high-quality YAlN thin films using pulsed laser deposition (PLD) under reduced-oxygen conditions to suppress oxidation. We report on the structural evaluation of AlN films, as well as doping strategies using sintered YAlN targets and a delta-doping method.