Session Details

[8a-N201-1~10]6.1 Ferroelectric thin films

Mon. Sep 8, 2025 9:00 AM - 11:30 AM JST
Mon. Sep 8, 2025 12:00 AM - 2:30 AM UTC
N201 (Lecture Hall North)

[8a-N201-1]Epitaxial growth of ScxAl1-xN with high Sc concentration

〇Takao Shimizu1, Naoki Ohashi1,2 (1.NIMS, 2.Science Tokyo)

[8a-N201-2]Control of direction of polarization in AlScN thin film by AlSc seed layer

〇(DC)Kazushi Onimura1, Yan Wu1,2, Hiroyuki Kobayashi2, Kuniyuki Kakushima1,2 (1.Science Tokyo, 2.Sumitomo Chemical Collaborative Research Cluster of Science Tokyo)

[8a-N201-3]Effects of seed layer on the growth of Sc-doped AlN thin films by High-Speed co-PLD and its impact on properties

〇(M2)Taiyo Mitaka1, Xueyou Yuan1, Shinya Kondo1, Tomoaki Yamada1,2 (1.Nagoya Univ., 2.Science Tokyo, MDX)

[8a-N201-4]Study of YAlN thin films fabrication using Pulse Laser Deposition

〇(M2)Shuhei Hashimoto1, Ryosuke Takagi1, Koji Iwasaki1, Kaito Fujitani1, Yasushi Hotta1 (1.Univ. of Hyogo)

[8a-N201-5]Effects of In-plane Orientation and Lattice Strain on Switching Properties in (Al,Sc)N Ferroelectric Thin Films

〇Shunpei Kawano1, Kazuki Okamoto1, Sotaro Kageyama1, Nana Sun1, Shinosuke Yasuoka1, Hiroshi Funakubo1 (1.Science Tokyo)

[8a-N201-6]Evaluation of Stress and Electrical Properties of (Ce,Mn) Co-doped ZnO Thin Films on Si substrates

〇HIROYA OISO1, Sakaguchi Moe1, Fujimura Norifumi1, Yoshimura Takeshi1 (1.Osaka Metro. Univ.)

[8a-N201-7]Effect of Ce doping on ferroelectric ZnO thin films: First principles calculation

〇SangHyo Kweon1, Atsuhiro Tamai1, Hideaki Adachi1, Hiroki Moriwake2, Ayako Taguchi2, Isaku Kanno1 (1.Kobe University, 2.JFCC)

[8a-N201-8]Multilayerd ferroelectric Zn(Ce,Mn)O thin films

〇Atsuhiro Tamai1, Yudai Yoshino1, Kazuki Nomura1, He Jingwei1, Kwoen Sang Hyo1, Hideaki Adachi1, Kanno Isaku1 (1.Kobe UniV.)

[8a-N201-9]Resistive Switching Analysis of Al0.7Sc0.3N Thin Films Directly Grown on Si

〇Koki Yasuoka1, Yusuke Aoki1, Hiroto Yamada1, Norifumi Fujimura1, Takeshi Yosimura1 (1.Osaka Metro. Univ.)

[8a-N201-10]Polarity control of AlN thin films by gas ratio in sputtering and polarization inverted SMR

〇Ayaka Hanai1,2, Takahiko Yanagitani1,2 (1.Waseda Univ., 2.ZAIKEN)