Presentation Information

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N201-5]Effects of In-plane Orientation and Lattice Strain on Switching Properties in (Al,Sc)N Ferroelectric Thin Films

〇Shunpei Kawano¹, Kazuki Okamoto¹, Sotaro Kageyama¹, Nana Sun¹, Shinosuke Yasuoka¹, Hiroshi Funakubo¹ (1.Science Tokyo)

Keywords:

Ferroelectric materials,Thin film

Ferroelectric (Al,Sc)N thin films offer several advantages, such as high remanent polarization, in addition to excellent compatibility with CMOS processes. However, a major challenge remains the high coercive field required for polarization switching. To address this issue, it is important to investigate the switching characteristics of ferroelectric (Al,Sc)N thin films, and active research is underway in this area. In this study, we fabricated uniaxially oriented films on various substrates and compared them with epitaxial films to investigate the effects of lattice strain and in-plane orientation on the switching characteristics.

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