[8a-N201-1~10] 6.1 Ferroelectric thin films

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N201-9] Resistive Switching Analysis of Al_0.7Sc_0.3N Thin Films Directly Grown on Si

〇Koki Yasuoka¹, Yusuke Aoki¹, Hiroto Yamada¹, Norifumi Fujimura¹, Takeshi Yosimura¹ (1.Osaka Metro. Univ.)

Keywords:

ferroelectric thin films,AlScN,non-volatile memory

Al_1-xSc_xN thin films exhibit a large spontaneous polarization and have attracted considerable attention as CMOS-compatible ferroelectric materials, with growing interest in their application to non-volatile memory devices. However, reports on the fabrication of heterojunctions formed by directly depositing AlScN on Si substrates remain limited. In this study, AlScN was deposited directly onto a Si(111) substrate, followed by the formation of metal electrodes to fabricate a device with a metal-ferroelectric-semiconductor (MFS) structure. Electrical characterization was performed with a focus on polarization-dependent resistive switching behavior.