Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N301-10]Demonstration of high carrier injection efficiency (>50%) AlGaN-based UV-B laser diodes

〇(M2)Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

nitride,UV LD,metal organic vapor phase epitaxy

In AlGaN-based UV-B laser diodes, we controlled the thickness of the Al composition grading layer at the EBL/p-guide interface by low-temperature MOVPE growth at 750 ℃. As a result, the carrier injection efficiency was significantly improved from 18% to over 50%, and a maximum optical output power of 521 mW was achieved. This is the first demonstration of high injection efficiency operation in UV LDs employing polarization doping, representing an important advancement toward high-efficiency and high-power UV LDs.

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