[8a-N301-1~11] 15.4 III-V-group nitride crystals

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-11] Reliability Evaluation in AlGaN-based UV-B Laser Diodes

〇(M1)Shion Kamiya¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

semiconductor laser

In this study, AlGaN-based UV-B laser diodes were subjected to high currents to analyse the behaviour leading to device breakdown and its breakdown mode.Evaluations were carried out by sequentially increasing the current under pulsed driving, using devices without end-face coating.The breakdown modes were mainly classified into two categories: 65% of the devices stopped oscillating while maintaining the diode characteristics; SEM observations showed that these devices had end-face breakdown due to COD with cracks in the active layer.It was shown that suppression of COD is important for improving reliability.