[8a-N301-1~11] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[8a-N301-5] Countermeasures for the degradation of 275-nm-band AlGaN LEDs

〇Shigefusa Chichibu¹, Kohei Shima¹, Koji Okuno², Masaki Oya², Atsushi Miyazaki², Shin-ya Boyama², Yoshiki Saito², Yoshio Honda³, Hiroshi Amano³, Hisanori Ishiguro⁴, Tetsuya Takeuchi⁴ (1.Tohoku Univ., 2.Toyoda Gosei, 3.Nagoya Univ., 4.Meijo Univ.)

Keywords:

Nitride semiconductor,Deep ultraviolet LEDs,Photoluminescence

Causes and countermeasures for the initial, fast degradation of 275-nm-band AlGaN QW LEDs will be presented for understanding the roles of vacancy clusters and field drift of protons.