[8a-N301-1~11] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N301-7] AlGaN UV-B refractive index waveguide laser diodes: dependence of Optical characteristics and etching effects

〇(M2)Rintaro Miyake¹, Takumu Saito¹, Shundai Maruyama¹, Shogo Karino¹, Yusuke Sasaki¹, Shion Kamiya¹, Ryota Watanabe¹, Yuma Miyamoto¹, Naoki Kitta¹, Seiya Kato¹, Syo Iwayama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

Keywords:

semiconductor laser

In this study, a UV-B LD was fabricated on a relaxed AlGaN template, and performance improvement through the introduction of a ridge waveguide structure was investigated. Focusing on the thickness X from the active layer, the relationship between etching depth and internal loss (αi) was evaluated, suggesting that etching at heterointerfaces with large Al composition differences is a factor in device degradation.