Presentation Information
[8a-N302-2]Temperature-tunable operando- and multi-energy XPES analysis of monolayer MoS2/c-sapphire structure
〇Takahiro Nagata1, Yoshiki Sakuma1, Masaaki Kobata2, Tatsuo Fukuda2, Tomonori Nishimura3, Shuhong Li3, Juiteng Chang3, Keisuke Atsumi3, Kaito Kanahashi3, Kosuke Nagashio3 (1.NIMS, 2.JAEA, 3.The Univ. of Tokyo)
Keywords:
hard x-ray photoelectron spectroscopy,surface and interface,MoS2
We investigated the effects of adsorbed components and process residues on the electronic properties of monolayer MoS2 grown on a sapphire substrate by MOCVD. Using temperature-variable in situ observation and multi-energy photoelectron spectroscopy, we evaluated the chemical bonding and electronic states of the MoS2/sapphire substrate structures. As a result, we found the decomposition and detachment of components other than MoS2 and changes in the Fermi position as the temperature increased.