Presentation Information
[8a-N302-5]Influence of gas in reactive ion etching on MoS2 film
〇Kotaro Kobayashi1, Matsunaga Naoki1, Jang Jaehyo1, Ito Soma1, Teraoka Kaede1, Nozawa Shunsuke1, Fuse Taiga1, Tatsumi Tetsuya2, Wakabayashi Hitoshi2 (1.Science Tokyo, 2.Science Tokyo IIR)
Keywords:
TMDC,MoS2,plasma
To realize further scaling of transistors, TMDCs are attracting attention as alternative semiconductor materials to silicon due to their unique properties, with MoS2 being a representative example. For industrial applications, process stabilization is essential, but understanding of the etching process remains insufficient. In this study, MoS2 film was used as channel materials, and channels were formed using O2 and Cl2 plasma reactive ion etching. The delamination of MoS2 within the channel was evaluated, and the yield was calculated.