[8a-N302-1~11] 17.3 Layered materials

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N302-8] Crystallization Behavior of Amorphous TiS₂ Electrode for the Realization of Low-Contact Resistance MoS₂ Transistor

〇Toshiya Sasaki¹, Mihyeon Kim¹, Fons Paul², Yuta Saito^1,3 (1.Tohoku Univ., 2.Keio Univ., 3.Tohoku Univ. GXT)

Keywords:

Transition Metal Chalcogenide,Contact,Crystalization

With the miniaturization of Si nearing its limits, transition metal dichalcogenides (TMDCs), typified by MoS₂, are being actively explored as alternative channel materials. A persistent issue, however, is the high contact resistance between MoS₂ and the electrodes. TiS₂ electrodes, also a TMDC, are a focus for reducing this resistance, yet they are amorphous as-deposited. In this presentation, we will report on the crystallization behavior of amorphous TiS₂ films formed on MoS₂.