[8a-N322-1~9] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-N322-1] High-Speed 3D Imaging of Laser-Induced Strain in a GaN Free-Standing Substrate by Stimulated Raman Scattering Microscopy

〇Yusuke Wakamoto¹, Shun Takahashi¹, Atsushi Tanaka², Takuya Maeda¹, Yasuyuki Ozeki¹ (1.UTokyo, 2.Nagoya Univ.)

Keywords:

strain,Raman,GaN

Laser slicing technology for free-standing GaN substrates is expected to contribute to cost reduction in device fabrication. Raman scattering spectroscopy is a powerful technique for evaluating internal strain through frequency shifts of lattice vibrations. However, due to the inherently weak signal intensity, imaging has traditionally required prohibitively long acquisition times. In this study, we successfully achieved high-speed three-dimensional imaging of internal strain induced by laser irradiation in free-standing GaN substrates using stimulated Raman scattering (SRS) microscopy.