The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[8a-N322-1~9]13.7 Compound and power devices, process technology and characterization

Mon. Sep 8, 2025 9:30 AM - 12:00 PM JST
Mon. Sep 8, 2025 12:30 AM - 3:00 AM UTC
N322 (Lecture Hall North)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-N322-1]High-Speed 3D Imaging of Laser-Induced Strain in a GaN Free-Standing Substrate by Stimulated Raman Scattering Microscopy

〇Yusuke Wakamoto1, Shun Takahashi1, Atsushi Tanaka2, Takuya Maeda1, Yasuyuki Ozeki1 (1.UTokyo, 2.Nagoya Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[8a-N322-2]Determination of band splitting and hole effective mass of valence band of GaN by angle-resolved photoemission spectroscopy

〇AKihira Munakata1, Seishu Arikawa1, Yoshinori Nakagawa2, Masaki Kobayashi1 (1.Univ. of Tokyo, 2.Nichia Corporation)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N322-3]Characterization of traps in quartz-free hydride vapor phase epitaxy-grown high-purity n-type GaN by capacitance transient spectroscopy

〇Yusuke Hirayama1, Masahiro Horita1,2, Jun Suda1,2, Shota Kaneki3, Hajime Fujikura3 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Sumitomo Chemical)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[8a-N322-4]Effect of GaOx interfacial layer on barrier heights of n-type GaN Schottky junctions

〇Ryo Sakai1, Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N322-5]Investigation of I-V Characteristics of GaN Needle-Contact Schottky Barrier Diodes

〇Riku Ando1, Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2, Yoriko Suda4, Narihiko Maeda4, Hideto Miyake1,2 (1.Grad. Sch. of Eng. Mie Univ., 2.IC-SDF, 3.ORIP, 4.Tokyo Univ. of Technology)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N322-6]Characterization of Interface Properties in Al2O3/n-GaN MOS Structures with Mist-CVD Fabricated Al2O3 Thin Film

〇Hadirah Radzuan1, Ryota Ochi2, Yusui Nakamura1, Takemoto Sato2, Zenji Yatabe1 (1.Kumamoto Univ., 2.Hokkaido Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N322-7]Reduction of hole traps in SiO2/GaN MOS structures with a thin Mg-based interlayer

〇Yuichi Sakagami1, Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.Osaka Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N322-8]Reduction of hole traps near SiO2/p-GaN MOS interfaces by high-pressure oxygen annealing

〇Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[8a-N322-9]All Ion-implanted Vertical GaN Planar-Gate MOSFETs Fabricated on 4-inch Substrates

〇Nao Suganuma1, Katsunori Ueno1, Ryo Tanaka1, Tsurugi Kondo1, Hirohisa Hirai2, Akira Nakajima2, Shinsuke Harada2, Shinya Takashima1 (1.Fuji Electric, 2.AIST)
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