[8a-N322-1~9] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[8a-N322-4] Effect of GaO_x interfacial layer on barrier heights of n-type GaN Schottky junctions

〇Ryo Sakai¹, Masahiro Hara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

GaN,Schottky junction,barrier height