[8a-N322-1~9] 13.7 Compound and power devices, process technology and characterization

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N322-5] Investigation of I-V Characteristics of GaN Needle-Contact Schottky Barrier Diodes

〇Riku Ando¹, Ryota Akaike^1,2, Hiroki Yasunaga^2,3, Takao Nakamura^1,2, Yoriko Suda⁴, Narihiko Maeda⁴, Hideto Miyake^1,2 (1.Grad. Sch. of Eng. Mie Univ., 2.IC-SDF, 3.ORIP, 4.Tokyo Univ. of Technology)

Keywords:

Schottky Barrier Diode