[8a-N322-1~9] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N322-6] Characterization of Interface Properties in Al₂O₃/n-GaN MOS Structures with Mist-CVD Fabricated Al₂O₃ Thin Film

〇Hadirah Radzuan¹, Ryota Ochi², Yusui Nakamura¹, Takemoto Sato², Zenji Yatabe¹ (1.Kumamoto Univ., 2.Hokkaido Univ.)

Keywords:

Mist-CVD,GaN,Al2O3

Low interface state density, low leakage current, high lifetime and stable operation are required to realize excellent GaN-based MOS devices. In this study, Al₂O₃/n-GaN capacitors were fabricated on free standing homoepitaxial n⁺-GaN substrates with the Al₂O₃ layer deposited by a low-cost mist-CVD technique. The deposition rate of the deposited Al₂O₃ and the interfacial characteristics of the fabricated MOS capacitors were then evaluated.