[8a-N322-1~9] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-N322-7] Reduction of hole traps in SiO₂/GaN MOS structures with a thin Mg-based interlayer

〇Yuichi Sakagami¹, Masahiro Hara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

GaN,MOS,Hole Trap