[8a-N322-1~9] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-N322-8] Reduction of hole traps near SiO₂/p-GaN MOS interfaces by high-pressure oxygen annealing

〇Masahiro Hara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.UOsaka)

Keywords:

gallium nitride,MOS structure,hole trap