Presentation Information
[8a-N322-8]Reduction of hole traps near SiO2/p-GaN MOS interfaces by high-pressure oxygen annealing
〇Masahiro Hara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.UOsaka)
Keywords:
gallium nitride,MOS structure,hole trap