[8a-N322-1~9] 13.7 Compound and power devices, process technology and characterization

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[8a-N322-9] All Ion-implanted Vertical GaN Planar-Gate MOSFETs Fabricated on 4-inch Substrates

〇Nao Suganuma¹, Katsunori Ueno¹, Ryo Tanaka¹, Tsurugi Kondo¹, Hirohisa Hirai², Akira Nakajima², Shinsuke Harada², Shinya Takashima¹ (1.Fuji Electric, 2.AIST)

Keywords:

semiconductor,GaN nitride semiconductor