[8a-N401-1~12] 15.5 Group IV crystals and alloys

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[8a-N401-3] Nucleus formation of Ge, Si by the core electron excitation and atom migration

〇Naoto Matsuo¹, Akira Heya¹, Koji Sumitomo¹, Kazushige Yamana¹, Tetsuo Tabei² (1.Univ. Hyogo, 2.Hiroshima Univ.)

Keywords:

Ge,Si,Nucleus,Soft x-ray

To realize a high-performance TFT and Solar cell, the crystallization by rapid thermal annealing (RTA) and excimer laser crystallization were developed. However, these methods deteriorate the substrate because of the increase of the semiconductor/glass temperature near the transition temperature. We developed new crystallization method of Ge, Si by the core electron excitation and atom movement utilizing the soft x-ray irradiation.